| Typical Parameters @ 25°C | Typical Value | Units | |
| Wavelength | 780 – 980 | nm | |
| Operation Mode | QCW | CW | |
| Array Peak Output Power | 200 – 5200 | 40 | W |
| Bar Emission Length | 10 | mm | |
| Number of Bars | 1 – 26 | 1 | # |
| Operating Current | 170 | 50 | A |
| Operating Voltage (per bar) | 2 | V | |
| Power Conversion Efficiency | 55 | % | |
| Bar to Bar Pitch | 150 (min) | µ | |
| Pulse Width | 300 (max) | ms | |
| Duty Cycle | 5 (max) | % | |
| Beam Divergence FWHM | 33×6 | 37×7 | ° |
| Beam Divergence FWHM (lensed) | 1×6 | 1×7 | ° |
Laser Diodes
G Package
The G Package laser diode array is a standard in the laser industry. It often serves as a building block for large laser systems or as a stand-alone unit in a laboratory environment. It is available with up to 26 bars and a maximum pulsed (QCW) output power of 5.2 kW. CEO offers these arrays with a variety of bar-to-bar pitches, including 150 µm (in our High Density Stack), and from 400 µm – 1.7mm. The G package is also available with CW output capable of producing 40 W of continuous power.
The G package mounts easily into laser systems or direct-diode applications. It is offered with any of CEO’s standard wavelengths between 780 nm – 980 nm. Custom wavelengths are also available. It is assembled with AuSn solder and expansion matched materials for a more robust assembly that promotes increased reliability. Many configurations can be built with fast-axis collimation, with divergence values less than 0.25° (FWHM).
Features
- Assembled with Hard Solder & Expansion Matched Materials
- Small, Compact Design
- Ideal for Laser Diode Pumping and Direct Diode Applications
- Fast and Slow Axis Lensing Options
- Multi-Wavelength Configurations
Typical Dimensions
Typical Specifications
Product VideoCapability Video
Popular Applications
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